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Department Of Materials Science And Engineering National Chiao Tung University | 論文
- Enhancing the Overwriting Characteristics of Phase-Change Optical Disks by Doping in Dielectric Layers
- Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System
- Sol–Gel-Derived Zn(1-x)MgxO Thin Films Used as Active Channel Layer of Thin-Film Transistors
- Cation-Mediated Effects on Zinc Oxide Films Formed by Chemical Bath Deposition
- Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles
- The Generation of Biaxial Optical Anisotropies in Polyimide Films by an Uniaxial Stretch Method
- Structural Effect on Stretch-Induced Birefringence in Polyimide Films
- Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
- Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
- Post-treatment Method of Producing Ordered Array of Anodic Aluminum Oxide Using General Purity Commercial (99.7%) Aluminum
- Carbon-Coated Porous Aluminum Oxides Used as Spacer Overlayers to Reduce Secondary Electron Emission for Field Emission Display Applications
- Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
- Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y
- Low-Temperature Synthesis Multiwalled Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition Using CH4–CO2 Gas Mixture
- Selected Area Electrophoretic Deposition of Carbon Nanotubes in Triode Structure for Field Emission Device
- Carbon-Coated Porous Aluminum Oxides Used as Spacer Overlayers to Reduce Secondary Electron Emission for Field Emission Display Applications (Crystal growth, surfaces, interfaces, thin films, and bulk materials)
- Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
- Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors