Sol–Gel-Derived Zn(1-x)MgxO Thin Films Used as Active Channel Layer of Thin-Film Transistors
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概要
- 論文の詳細を見る
Sol–gel derived n-type Zn(1-x)MgxO ($x=0--0.45$) thin films and thin-film transistors (TFTs) with active channel layers made of the films were investigated. The films were prepared at 500°C. The effects of Mg doping on the crystallinity, optical transparency, grain size, and charge-carrier concentration ($n$) of the films were examined. The Fermi level of the films, as derived from the temperature dependence of $n$, was ${\sim}0.12$ eV below the conduction band. The donor concentration and donor level ($E_{\text{d}}$) were derived by a curve fitting method based on the electrical neutrality condition. $E_{\text{d}}$ was found to be ${\sim}0.3$ eV below the conduction band. The composition dependence of the TFT output characteristics was interpreted and correlated to the width of the depletion region adjacent to the grain boundaries. When the grains were almost depleted at $x=0.2$, the TFT showed an enhancement mode and an on/off ratio of $10^{6}$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Ho Jia
E1100 Electronics Research And Service Organization Industrial Technology Research Institute
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WANG Yu
E1100, Electronics Research and Service Organization, Industrial Technology Research Institute
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Lee Cheng
E1100 Electronics Research And Service Organization Industrial Technology Research Institute
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Lee Jen
Department Of Electrophysics National Chiao-tung University
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Lin Pang
Department Of Materials Science And Engineering National Chiao Tung University
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Wang Yu
E1100, Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
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Lin Pang
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China
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Ho Jia
E1100, Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
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Lee Jen
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China
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Lee Cheng
E1100, Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
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