Microstructure and Electrical Resistivity of Low-Temperature-Cured Silver Films Prepared Using Silver Oxide and Silver Stearate Pastes
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概要
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In this study, paste formulations containing silver oxide coated with a metallo-organic decomposition (MOD) agent of silver stearate were prepared without using any silver powders or silver flakes. Results indicate that all pastes appear to have a pseudoplastic flow property that is acceptable for roll-to-roll printing and screen printing. The pastes were screen-printed on an alumina substrate and then thermally treated in a range of temperatures. The lowest electrical resistivity of $13.2 \times 10^{-6}$ $\Omega$$\cdot$cm was obtained for the film prepared from paste with a Ag2O/silver stearate ratio of $100:5$ at a solid loading of 80 wt % in the solvent $\alpha$-terpineol, after being cured at 160 °C for 5 min, which meets the requirements of low-temperature and high-speed manufacturing for practical applications. The low resistivity of the film is facilitated by the combination of Ag2O and silver stearate added to the paste. Ag2O produces a high density of silver matrix after being reduced at low temperatures, and the presence of silver stearate contributes to the rheological behavior of the paste after dissolution in the solvent. Coexistence of Ag2O and silver stearate induces their simultaneous transformation to the silver form at temperatures below 160 °C.
- 2009-01-25
著者
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Wang Sea-fue
Department Of Materials And Mineral Engineering National Taipei University Of Technology
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Lin Pang
Department Of Materials Science And Engineering National Chiao Tung University
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Lin Hong-ching
Department Of Materials Science And Engineering National Chiao Tung University
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Lin Pang
Department of Materials Science Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Lu Chun-An
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, R.O.C
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Lin Hong-Ching
Department of Materials Science Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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