Microstructure and Dielectric Properties of Sputtered (Ba0.3Sr0.7)TiO3 Thin Films with Amorphous Interfacial Layers
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概要
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Crystallization behavior, microstructure and dielectric properties of sputtered (Ba0.3Sr0.7)TiO3 thin films have been studied. The crystallization from as-deposited amorphous structure to equilibrium crystalline structure is confirmed as an irreversible, exothermic and first-order transition by differential scanning calorimetry. At a heating rate of 20°C/min, the exothermic peak temperature for crystallization is measured to be 697.3°C. Transmission electron microscopy results reveal layered structures of amorphous and perovskite crystalline phases in the films deposited at temperatures between 450 and 650°C. The amorphous interfacial layer diminishes with increasing substrate temperature and a well-crystallized film is found at 750°C with a dielectric loss of 0.021. Dielectric constant shows an abrupt increase to 187 for the film deposited at 750°C as a result of the fully crystallized structure. The measured dielectric constants at different temperatures are well consistent with those calculated based on the presence of amorphous interfacial layers in the films.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-07-15
著者
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Wang Sea-fue
Department Of Materials And Mineral Engineering National Taipei University Of Technology
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Chu Jinn
Institute Of Materials Engineering National Taiwan Ocean University
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Lin Tai-nan
Institute Of Materials Engineering National Taiwan Ocean University
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Wu Cheng-hui
Institute Of Materials Engineering National Taiwan Ocean University
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Chu Jinn
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, R.O.C.
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Wu Cheng-Hui
Institute of Materials Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, R.O.C.
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