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Department Of Electronics Engineering Southern Taiwan University Of Technology | 論文
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- Interface Modification in Organic Thin Film Transistors
- High Reliable Nitride Based LEDs with Internal ESD Protection
- Nitride-based p-i-n Photodetectors with ITO p-contacts
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
- A Low-Power High-Speed Rail-to-Rail Class-B Output Buffer for TFT-LCD Source Driver
- A Low-Power High-Speed Rail-to-Rail Class-B Output Buffer for TFT-LCD Source Driver
- A Low-Power High-Speed Rail-to-Rail Class-B Output Buffer for TFT-LCD Source Driver
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
- GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors
- GaN Photodetectors with Transparent Indium Tin Oxide Electrodes