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Department Of Electronic Science And Engineering Kyoto University | 論文
- Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
- Sympathetic premotor neurons mediating thermoregulatory functions
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- Cubic ZnCdS Lattice-Matched to GaAs : A Novel Material for Short-Wavelength Optoelectronic Applications
- Interaction between Dielectric Barrier Discharge and Positive Streamer in Helium Plasma Jet at Atmospheric Pressure
- In vivo function of Rnd2 in the development of neocortical pyramidal neurons
- クラスターイオンビーム技術の最近の進展
- A Possible Role of Incoming Spike Synchrony in Associative Memory Model with STDP Learning Rule(Oscillation, Chaos and Network Dynamics in Nonlinear Science)
- Properties of YiBa_2Cu_3O7_ Superconducting Thin Films Prepared by Reactive Evaporation Method
- Significance of immature platelet fraction and CD41-positive cells at birth in early onset neonatal thrombocytopenia
- Band Calculation for Ce-Compounds on the basis of Dynamical Mean Field Theory(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
- Three Types of Ternary Selenides with Layered Composite Crystal Structures Formed in the Pb-Nb-Se System
- Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
- ミストデポジション法による酸化マグネシウム(MgO)薄膜作製 : 大気圧下、低温成長への挑戦
- Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
- Surface Potential Measurement of Tris(8-hydroxyquinolinato)aluminum and Bis[N-(1-naphthyl)-N-phenyl]benzidine Thin Films Fabricated on Indium--Tin Oxide by Kelvin Probe Force Microscopy