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Department Of Electronic Science And Engineering Kyoto University | 論文
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
- Linear and Nonlinear Optical Properties of a Comb-Like Polymer
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- Photoemission Study on Protonic Conductor CaZrO_3:Evidence of the Exchange Mechanism of Proton and Hole
- Transport Coefficients of Indium Antimonide in a Magnetic Field
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Investigation of Discharge Phenomena in a Cell of Color Plasma Display Panel I. : One-Dimensional Model and Numerical Method
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Plasma Production and Wave Propagation in a Plasma Source Using Lower Hybrid Waves
- Measurement and Calculation of SiH_2 Radical Density in SiH_4 and Si_2H_6 Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films
- In Situ Monitoring of Selective Copper Deposition Processes in a Metal-Organic Chemical Vapor Depositiorn Using Fourier-Transform Infrared Reflectiorn-Absorptiorn Spectroscopy
- Diffusion and Quenching of Metastable Xe Atoms in Mixtures of Xe and Rare Gases
- In Situ Measurement of Gas-Phase Reactions in Metal-Organic Chemical Vapor Deposition of Copper Films by Fourier Transform Infrared Spectroscopy
- Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deporsition of Hydrogenated Amorphous Silicon Film
- An IR Study on the Stability of Y(DPM)_3, Ba(DPM)_2 and Cu(CPM)_2 for UV Irradiation
- Influence of Ozone Concentration on the Preparation of Stoichiometric Superconducting Y-Ba-Cu-O Films by a Metalorganic Chemical Vapor Deposition Technique