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Department Of Electronic Science And Engineering Kyoto University | 論文
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Preparation of Nearly Stoichiometric Superconducting Y-Ba-Cu-O Films by an MOCVD Technique Using Ozone
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Spectroscopic Study on a Discharge Plasma of MOCVD Source Gases for High-T_C Superconducting Films
- Preparation and Characterization of Superconducting Y-Ba-Cu-O Films by the MOCVD Technique
- On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films
- A Numerical Study on Gaseous Reactions in Silane Pyrolysis
- The Layered Composite Crystal Structure of the Ternary Sulfied, (SnS)_TaS_2 "SnTaS_3"
- The Layered Composite Crystal Structure of the Ternary Sulfide, (BiS)_TaS_2 "BiTaS_3"
- Atomic Hydrogen Induced Surface Restructuring on the Tin-Covered Si(111) Observed by Scanning Tunneling Microscopy
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Experimental Verification of Complex Dispersion Relation in Lossy Photonic Crystals
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Ultra-Broadband Supercontinuum Generation and Characterization of Brillouin/Raman Fiber Laser (「ファイバレーザーの新展開」解説小特集)
- Output Characteristics of P-doped Raman Fiber Laser at 1484 nm with 2.11 W Maximum Output Power Pumped by CW 1064 nm Yb-doped Double-Clad Fiber Laser