スポンサーリンク
Department Of Electronic Science And Engineering Kyoto University | 論文
- Observation of Si(110) Surfaces by High-Temperature Scanning Tunneling Microscopy
- X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
- Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
- Steroid-Responsive Limbic Encephalitis
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Observations of Silicon Surfaces Exposed to Inductively Coupled CHF_3 and C_4F_8/H_2 Plasmas Using Fourier Transform Infrared Ellipsometry
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Acoustic de Haas-van Alphen Effect of LaB_6
- Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
- Q-Value Control of Piezoelectrie Vibrator Using Operational Amplifier Circuit