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Department Of Electronic Engineering Graduate School Of Engineering Tohoku University | 論文
- Above-Complementary Metal--Oxide--Semiconductor Metal Pattern Technique for Postfabrication Tuning of On-Chip Inductor Characteristics
- An Extension to the Natural Gradient Algorithm for Robust Independent Component Analysis in the Presence of Outliers(Digital Signal Processing)
- Negative Anisotropic Magnetoresistance in Fe_4N Film
- Short-term response of arbuscular mycorrhizal association to spider mite herbivory
- Structural Interlock between Ligand-Binding Site and Stalk-Like Region of β1 Integrin Revealed by a Monoclonal Antibody Recognizing Conformation-Dependent Epitope^1
- Eliminating Needless Calculations on Circuit Level : Most-Significant-Digit-First Digit-Serial Processing
- Fast Computational Architectures to Decrease Redundant Calculations : Eliminating Redundant Digit Calculation and Excluding Useless Data (Special Issue on Integrated Electronics and New System Paradigms)
- Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
- Formation Process of Highly Reliable Ultra-Thin Gate Oxide
- Dielectric Relaxation Effect of Traveling Carriers in the Semiconductors
- Gas Chemistry Dependence of Si Surface Reactions in a Fluorocarbon Plasma during Contact Hole Etching
- Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching
- Trends for Future Silicon Technology
- Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Oxidation Process
- Modified Membrane Approximation on a Thin Liquid Sheet : Classical Phenomenology and Applications
- Neuron-MOS Parallel Search Hardware for Real-Time Signal Processing
- Enlargement for Images with Gaussian Noise by Embedded Filtering in the LP Algorithm(Papers Selected from the 20th Symposium on Signal Processing)
- Inverse Current-Induced Magnetization Switching in Magnetic Tunnel Junctions with Fe4N Free Layer
- Anomalous Anisotropic Magnetoresistance in Pseudo-Single-Crystal $\gamma'$-Fe4N Films
- Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels