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Department Of Electronic Engineering Graduate School Of Engineering Tohoku University | 論文
- Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
- A Dynamically Reconfigurable Processor with Multi-Mode Operation Based on Newly Developed Full-Adder/D-Flip-Flop Merged Module (FDMM)
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment
- Measurement of nonlinear property of artery wall using remote cyclic actuation
- Planar-Type Gunn Diode of InP
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- Intracranial Extension of an Orbital Pseudotumor Accompanied by Internal Carotid Artery Occlusion : Case Report
- Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits (Special Issue on Scientific ULSI Manufacturing Technology)
- Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
- Effect of Preoxide on the Structure of Thernmal Oxide
- Motivating Basic Research in the University
- Native Oxide Growing Behavior on Si Crystal Structure and Resistivity
- Arbuscular mycorrhizal fungi species-specifically affect induced plant responses to a spider mite
- The Nature of Metallic Contamination on Various Silicon Substrates
- In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
- In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction
- Modeling and Analysis of RF Plasma Using Electrical Equivalent Circuit