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Department Of Electronic Engineering Faculty Of Engineering Tohoku University | 論文
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
- Study of the Temperature Dependence of the Magnetization Direction in Cobalt Single Crystals by 1 MV Lorentz Electron Microscopy
- The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
- The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- Analysis of Negative Resistance Based on Space-Charge-Layers Overlapping in Switching Diodes with Deep Impurity Levels
- Delayed Switching in Crystalline Si Diodes with Deep Impurity Levels
- Low Temperature Thermal Nitridation of GaAs Surfaces
- Schottky Contact Characterization of Sputter-Etched Surface of GaAs and Its Recovery by Annealing
- Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
- Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
- Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma