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Department Of Electrical Engineering. Osaha University | 論文
- Influence of DC Biasing on the Formation of Hydrogenated Amorphous Carbon Films Using a Plasma-Based Ion Implantation Technique
- Characterization of GaAs Surfaces Treated with Remote PH_3 Plasma
- Characterization of InGaAs Phosphidized by a Plasma Process
- Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Characterization of AlInAs/InGaAs High Electron Mobility Transistor Wafers Treated with Remote Phosphine Plasma
- Comparison of the effects of long-acting nifedipine CR and diltiazem R in patients with vasospastic angina : Aomori coronary spastic angina study