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Department Of Electrical Engineering Pohang University Of Science And Technology | 論文
- A Low-Power Half-Swing Clocking Scheme for Flip-Flop with Complementary Gate and Source Drive
- Single-Chip Implementation of a 32-bit Motor-Drive-Specific Microcontroller with Floating-Point Unit (Special Issue on Integrated Electronics and New System Paradigms)
- Antibodies Prevalence against HPV-6b and -16 Recombinant Fusion Proteins in Korean Patients with Cervical Neoplasia
- Line Width Variation due to Global Topography
- Optical Behavior of Thickness Shear Mode Quartz Crystal Resonator
- A Temperature- and Supply-Insensitive Fully On-Chip 1Gb/s CMOS Open-Drain Output Driver for High-Bandwidth DRAMs
- Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs
- Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
- Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
- Model Predictive Control for Linear Parameter Varying Systems Using a New Parameter Dependent Terminal Weighting Matrix(Systems and Control)
- A Decision Feedback Equalizing Receiver for the SSTL SDRAM Interface with Clock-Data Skew Compensation(Integrated Electronics)
- An Analytic Time Jitter Equation of NRZ Signals in Uniformly Loaded PCB Transmission Lines
- Striation Mechanism and Triggered Striation in Dielectric Microdischarge Plasma : Nuclear Science, Plasmas, and Electric Discharges
- Fully On-Chip Current Controlled Open-Drain Output Driver for High-Bandwidth DRAMs
- An 8-GS/s 4-Bit 340 mW CMOS Time Interleaved Flash Analog-to-Digital Converter(Analog Circuit Techniques and Related Topics)
- An 8-Bit 200MS/s CMOS Folding/Interpolating Analog-to-Digital Converter
- IS-57 A Comparative Study of Postoperative Adhesions and Histologic Reactions Following Pelvic Surgery by Operative pelviscopy Versus Laparotomy in the Rabbit
- Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
- Photoresist Exposure Parameter Extraction from Refractive Index Change during Exposure
- Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface