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Department Of Electrical Engineering Faculty Of Engineering Kyushu University | 論文
- Consultation-liaison Service of Department of Psychosomatic Medicine in University of Tokyo
- Investigation of Particulate Growth Processes in RF Silane Plasmas Using Light Absorption and Scanning Electron Microscopic Methods ( Plasma Processing)
- Sensitive H_2 Detection Using a New Technique of Photoacoustic Raman Spectroscopy
- Mining Fuzzy Association Rules : A General Model Based on Genetic Network Programming and its Applications
- Fabrication of Nanoparticle Composite Porous Films Having Ultralow Dielectric Constant
- Highly Stable a-Si:H Films Deposited by Using Multi-Hollow Plasma Chemical Vapor Deposition
- Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
- Effects of Gas Temperature Gradient, Pulse Discharge Modulation, and Hydrogen Dilution on Particle Growth in Silane RF Discharges
- Optimum Wavelengths in Solar-Blind UV Ozone Lidars
- Laser Resonance Scattering Studies of the Development of a Potential Step in a Low-Density DC Discharge in Hydrogen
- Measurement of Preferential Sputtering of Iron-Oxides Using Laser Fluorescence Spectroscopy : Surfaces, Interfaces and Films
- Observation of Balmer-Alpha Line Profile of Hydrogen Atoms in Plasmas by Rapid-Frequency-Scan laser Spectroscopy : Waves, Optics and Quantum Electronics
- Velocity-Distribution Functions of Sputtered Atoms Caused by Insufficiently Developed Collision-Cascades
- Transient Change in the Velocity Distribution Functions of Sputtered Atoms during Initial Dose in Ion-Beam Bombardment
- A Proposal for Local Magnetic-Field Measurement in High-Temperature Plasma Devices Using a Rapid-Frequency-Scan Laser
- Modeling of Particle Growth in RF Silane-Helium Plasma ( Plasma Processing)
- An Improved Method to Determinethe Capture Cross-section of Majority Carriers from the Pulse-Filling Measurement
- Comparison of Dopant and Oxygen Striations at the Same Point in Czochralski Silicon Crystals
- Trap Levels of Beryllium in Silicon
- On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement