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Department Of Electrical And Electronic Engineering Meijyo University | 論文
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
- Present and Future Nitride-Based Devices
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Investigation of the Leakage Current in GaN P-N Junctions
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates