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Department Of Electrical And Electronic Engineering Meijyo University | 論文
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate