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Department Of Eecs Kaist | 論文
- Loop and Address Code Optimization for Digital Signal Processors
- A Hierarchical Circuit Clustering Algorithm with Stable Performance
- Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device
- CLASSIC:An O(n^2)-Heuristic Algorithm for Microcode Bit Optimization Based on Incompleteness Relations
- An Efficient Fragment Processing Technique in A-Buffer Implementation
- Person Recognition Method Using Sequential Walking Footprints via Overlapped Foot Shape and Center-of-Pressure Trajectory(Papers Selected from 2003 International Technical Conference on Circuits/Systems, Computers and Communications(ITC-C
- A Novel Feature Selection for Fuzzy Neural Networks for Personalized Facial Expression Recognition(Papers Selected from 2003 International Technical Conference on Circuits/Systems, Computers and Communications(ITC-CSCC 2003))
- Path planning for a quadruped robot : an artificial field approach
- Adaptive Tessellation of PN Triangles Using Minimum-Artifact Edge Linking(Computer Graphics)
- SCR stacking structure with high holding voltage for high voltage power clamp
- Efficient Edge Function Based Anisotropic Texture Filtering(Computer Graphics)
- A New Single-Clock Flip-Flop for Half-Swing Clocking (Special Section on VLSI Design and CAD Algorithms)
- Path-Classified Trace Cache for Improving Hit Ratio in Wide-Issue Processors
- SEWD:A Cache Architecture to Speed up the Misaligned Instruction Prefetch
- An Efficient Fragment Processing Technique in A-Buffer Implementation (Computer Graphics)
- TLB Update-Hint : A Scalable TLB Consistency Algorithm for Cache-Coherent Non-uniform Memory Access Multiprocessors(Networking and System Architectures)(Hardware/Software Support for High Performance Scientific and Engineering Computing)
- MTCP: A Transmission Control Protocol for Multi-Provider Environment(Network)
- Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions
- Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer
- Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer