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Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo | 論文
- Theoretical Considerations on Lateral Spread of Implanted Ions
- An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
- Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF_2 and H_2 Mixture : C-5: SOLAR CELLS
- Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
- Study on Efficiency of Piezoelectric Semiconductor SAW Convolver
- Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
- Study on Measurement of Carrier Effective Lifetime in Furnace and Laser Annealed Diodes
- The Lattice Location of Phosphorus Atoms Implanted into Silicon
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Mass Dependence of Critical Amorphizing Dose in Ion Implantation