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Central Research Laboratory Hitachi Ltd. | 論文
- ポーラスlow-k膜のk値上昇(TDDI)メカニズムと信頼性向上技術
- Binding of Norovirus Virus-Like Particles (VLPs) to Human Intestinal Caco-2 Cells and the Suppressive Effect of Pasteurized Bovine Colostrum on This VLP Binding
- Very Thin Single-Walled Carbon Nanotubes Self-Assembled on 6H-SiC(0001) Substrate by Surface Decomposition Method
- Interhemispheric connection of auditory neural pathways assessed by auditory evoked magnetic fields in patients with fronto-temporal lobe infarction
- A Development of Circuit Emulation System on TDM over Ethernet Comprising OAM and Protection Function( The Next Generation Ethernet Technologies)
- Normalization of Time-Derivative Parameters for Robust Speech Recognition in Small Devices(Speech and Hearing)
- 電気抵抗比による市販ICのエレクトロマイグレーション信頼度評価(低誘電率層間膜,配線材料及び一般)
- ダマシンCu配線における絶縁劣化現象
- 低寄生容量銅多層配線のための新しいプロセス技術 : 砥粒フリー銅CMP(ACP)及び新低誘電率材料:メチルシリコンオキシカーバイド(MTES)
- ED2000-47 / SDM2000-47 低寄生容量銅多層配線のための新しいプロセス技術 : 砥粒フリー鋼CMP(ACP)及び新低誘電率材料:メチルシリコンオキシカーバイド(MTES)
- Cu電界ドリフトによる絶縁破壊
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- Variability analysis of MOS differential amplifier (特集 小規模アナログ集積回路設計技術)