Variability analysis of MOS differential amplifier (特集 小規模アナログ集積回路設計技術)
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概要
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Variation characteristics in MOS differential amplifier are evaluated by using the concise statistical model parameters for SPICE simulation. We find that the variation in the differential-mode gain, Adm, induced by the current factor variation, Δβ0, in the Id-variation of the differential MOS transistors is more than one order of magnitude larger than that induced by the threshold voltage variation, ΔVth, which has been regarded as a major factor for circuit variations in SoCs (2). The results obtained by the Monte Carlo simulations are verified by the theoretical analysis combined with the sensitivity analysis which clarifies the specific device parameter dependences of the variation in Adm.
- 2009-08-01
著者
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AOKI Masakazu
Electronic Systems Engineering, Tokyo University of Science
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SETO Kenji
Electronic Systems Engineering, Tokyo University of Science
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YAMAWAKI Taizo
Central Research Laboratory, Hitachi Ltd.
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TANAKA Satoshi
Central Research Laboratory, Hitachi Ltd.
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Seto Kenji
Electronic Systems Engineering Tokyo University Of Science
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Yamawaki Taizo
Central Research Laboratory Hitachi Ltd.
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Aoki Masakazu
Electronic Systems Engineering Tokyo University Of Science
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Tanaka Satoshi
Central Research Laboratory Hitachi Ltd.
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TANAKA Satoshi
Central Research Laboratories, Sysmex Corporation
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- Variability analysis of MOS differential amplifier (特集 小規模アナログ集積回路設計技術)
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