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Central Research Laboratory, HITACHI, LTD. | 論文
- Effect of H_2 Annealing on a Pt/PbZr_xTi_0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
- Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures
- Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching
- Bubble Velocity in Hard-Bubble-Free Garnet Films
- Hard-Bubble-Free Garnet Epitaxial Films : The Garnet-Permalloy Composite Structure
- Formation of Extraordinary Bubbles by Cutting Strip Domains
- Statics of Extraordinary Bubbles
- A Method of Producing Extraordinary Bubbles in Epitaxial Garnet Films
- Active Vibration Correction in Electron Beam Lithography System
- High Speed Electron Beam Cell Projection Exposure System (Special Issue on Quarter Micron Si Device and Process Technologies)
- EB call projection Lithography : Lithography Technology
- Some Approaches to High Density Bubble Memory Chips : E-1: MAGNETIC BUBBLE DEVICES: PRESENT AND FUTURE
- A 12.5-ns 16-Mb CMOS SRAM with Common-Centroid-Geometry-Layout Sense Amplifiers (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
- Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
- Nanometer-Sized Phase-Change Recording Using a Scanning Near-Field Optical Microscope with a Laser Diode
- Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
- Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct