Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching

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概要

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• High-gas-flow-rate electron cyclotron resonance plasma etching was employed to reduce microloading in Si etching with Cl_2 at low pressure. Microloading estimated with a conventional etching system increases with decrease in pressure from 5 to 0.5 mTorr. The increase in microloading is attributed to the increase in tire ratio of ion flux to reacting neutrals. The ion/neutral ratio was found to be as large as 6.4 at 0.5 mTorr. This large ratio was caused by both the decrease in reacting neutral density and the increase in reaction products. The high gas flow rate with a high effective pumping speed of 2000 l/s reduces the reaction products, increases the reacting neutrals and reduces the ion/neutral ratio to 0.65. As the result, the microloading is reduced. The relative etch rate at an aspect ratio of 7 increases from 0.65 at 136 l/s to 1.00 at 2000 l/s. Thus high-gas-flow-rate-etching solved the problem of large microloading which is not suppressed even with high density plasma and low gas pressure.

• 社団法人応用物理学会の論文
• 1995-05-15

著者

• KOFUJI Naoyuki

  Central Research Laboratory, Hitachi, Ltd.

• Kofuji Naoyuki

  Central Research Laboratory Hitachi Ltd.

• TSUJIMOTO Kazunori

  Central Research Laboratory, Hitachi, Ltd.

• Kumihashi Takao

  Central Research Laboratory, Hitachi, Ltd.

• Kumihashi T

  Hitachi Ltd. Tokyo Jpn

• Tsujimoto Kazunori

  Central Research Laboratory Hitachi Ltd

関連論文

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• Precise CD-Controlled Gate Etching Using UHF-ECR Plasma
• Investigation of Mask Deformation by Oxygen-Radical Irradiation during Resist Trimming
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
• Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching
• Deposition in Dry-Etching Gas Plasmas
• Sub-Quarter-Micron Pt Etching Technology Using Electron Beam Resist with Round-Head
• Low-Temperature Microwave Plasma Etching of Crystalline Silicon
• Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies
• Investigation of Mask Inclination Due to Oxygen-Radical Irradiation during Resist Trimming
• Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies

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