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Central Research Laboratories Nippon Electric Co. Ltd. | 論文
- Lattice Parameter Variations in Czochralski Grown Gadolinium Gallium Garnet Single Crystals
- Spotty Defects in Oxidized Floating-Zoned Dislocation-Free Silicon Crystals
- Ferroelectricity in Pb_5Ge_3O_
- Surface Defects of GaP Epitaxial Layers Grown by Ga -PCl_3-H_2 System
- Bright Spots in the Image of Silicon Vidicon
- Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
- Vapor Growth of InAs_xP_
- Vapor Growth of InP
- Epitaxial Growth of Semi-Insulating Gallium Arsenide
- Vapor Growth of InAs
- Light Doping of Sn into Vapor Grown GaAs
- The Electric and the Magnetic Field Dependence of Electrical Conductivity of n-Ge at Low Temperature
- The Measurement of Al Distribution in the (Al, Ga)As DH Wafers
- Anomalous Vapor Transport Reaction of GaAs with AsCl_3 in H_2 Gas Flow System
- Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate Interface
- Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
- Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
- Threshold Energy of Nd: YAG Laser as a Function of Neodymium Concentration
- Continuous Oscillation and Amplification in Light-Focusing Glass Lasers