Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-12-05
著者
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Mizuno Osamu
Central Research Laboratories Nippon Electric Company Ltd.
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Mizuno Osamu
Central Research Laboratories Nippon Electric Co. Ltd.
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KIKUCHI Sadao
Central Research Laboratories, Nippon Electric Company, Ltd.
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MARUYAMA Mitsuhiro
Central Research Laboratories, Nippon Electric Company, Ltd.
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Kikuchi Sadao
Central Research Laboratories Nippon Electric Company Ltd.
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Kikuchi Sadao
Central Research Laboratories Nippon Electric Co. Ltd.
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Maruyama Mitsuhiro
Central Research Laboratories Nippon Electric Company Limited
関連論文
- Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
- Vapor Growth of InAs_xP_
- Vapor Growth of InP
- Epitaxial Growth of Semi-Insulating Gallium Arsenide
- Vapor Growth of InAs
- Light Doping of Sn into Vapor Grown GaAs
- Diffusion of Zinc into GaAs
- Ruby Crystals Grown by the Czochralski Technique