Vapor Growth of InP

スポンサーリンク

概要

• 論文の詳細を見る

• Epitaxial InP layers were grown on (100), (110), (111)A and (111)B planes using the In-PCl_3-H_2 and InP-PCl_3-H_2 vapor phase systems. There is no essential difference in growth kinetics between the systems. The growth rate is independent of the substrate temperature gradient. The substrate orientation dependence of the growth rate is in the order of (110)>(111)A≈(111)B>(100). In the region where the growth rate is limited by the surface reaction, the growth rate decreases with increasing PCl_3 flow rate for (100) and (110) planes and is nearly constant for (111)A and (111)B planes. The activation energies of the surface reactions for (100), (110), (111)A and (111)B planes are 16, 22, 20 and 15 kcal/mol, respectively. For the vapor growth of InP, the phosphorus vapor pressure in the reaction tube must be one order of magnitude higher than the dissociation pressure.

• 社団法人応用物理学会の論文
• 1975-04-05

著者

• Mizuno Osamu

  Central Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
• Vapor Growth of InAs_xP_
• Vapor Growth of InP
• Epitaxial Growth of Semi-Insulating Gallium Arsenide
• Vapor Growth of InAs
• Light Doping of Sn into Vapor Grown GaAs

スポンサーリンク