Vapor Growth of InAs_xP_<1-x>

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概要

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• Epitaxial InAs_xP_<1-x> layers have been grown on GaAs, InAs and InP substrates using the InAs-AsCl_3-InP-PCl_3-H_2, InAs-HCl-InP-HCl-H_2 and In-AsCl_3-In-PCl_3-H_2 vapor phase systems. It has been clarified that in these systems the grown layer composition x is dependent only on the gas composition (ratio of As/(As+P) in gas phase) and is independent of the other growth parameters, growth temperature, reactant gas concentration, hydrogen flow rate, substrate material, crystallographic orientation of substrate and growth system. The equilibrium constants of the growth reactions for InAs and InP have been obtained experimentally. A thermodynamical calculation for the vapor growth of InAs_xP_<1-x> has been carried out. Good agreements between experimental results and calculated results have been obtained. An interaction parameter of 3000 cal/mole for InAs-InP alloy is suggested.

• 社団法人応用物理学会の論文
• 1974-12-05

著者

• Mizuno Osamu

  Central Research Laboratories Nippon Electric Co. Ltd.

• Arai Ken'ichi

  Central Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Improvement of the Interface Impurity Profile of Vapor Grown GaAs by Using Doubly Doped Substrate
• Vapor Growth of InAs_xP_
• Vapor Growth of InP
• Epitaxial Growth of Semi-Insulating Gallium Arsenide
• Vapor Growth of InAs
• Light Doping of Sn into Vapor Grown GaAs

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