Surface Defects of GaP Epitaxial Layers Grown by Ga -PCl_3-H_2 System

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-11-05

著者

• Usui Akira

  Central Research Laboratories Nippon Electric Co. Ltd.

• MORI Katsumi

  Central Research Laboratories, Nippon Electric Co., Ltd.

• Mori Katsumi

  Central Research Laboratories Nippon Electric Co. Lid.

関連論文

• Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber Method
• Surface Defects of GaP Epitaxial Layers Grown by Ga -PCl_3-H_2 System
• Threshold Energy of Nd: YAG Laser as a Function of Neodymium Concentration
• ESR Line Width of Trivalent Neodymium Ions in Y_3Al_5O_
• Formation of p-n Junction for Efficient GaAs_P_xLEDs by Diffusion from Doped Spin-On Oxide
• Detection of Transient Absorption in YAG Laser Crystals Using Combined Laser

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