Anomalous Vapor Transport Reaction of GaAs with AsCl_3 in H_2 Gas Flow System

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概要

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• Under conditions of high flow rate of hydrogen carrier, the transport rate of GaAs or arsenicsaturated gallium by AsCl_3 has been found to be much higher than that theoretically predicted. The anomalous source transport reaction is described. Dependences of the transport rate on the source temperature and hydrogen flow rate, effect of preheating input gas on the transport rate and transport reaction in nitrogen carrier gas were studied. From a kinetic analysis of these results, it is concluded that an anomaly occurs when the source reacts directly with AsCl_3, and not with HCl. The appearence of non-equilibrium vapor caused by the anomaly must be due to a large velocity difference between the fast process of AsCl_3 etching reaction and the slow process of H_2-involved equilibration reaction. This model confirms the previously reported GaAs vapor growth method utilizing the anomaly.

• 社団法人応用物理学会の論文
• 1975-10-05

著者

• Watanabe Hisatsune

  Central Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber Method
• Vapor Growth of InAs
• Anomalous Vapor Transport Reaction of GaAs with AsCl_3 in H_2 Gas Flow System

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