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Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. | 論文
- Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO_3 Grain Boundary Layer
- Viewing Angle Enhancement of Three-Dimension/Two-Dimension Convertible Integral Imaging Display Using Double Collimated or Noncollimated Illumination
- Numerical Analysis of One-Dimensional Magnetophotonic Crystals with an Active Layer of a Highly Bi-Substituted Iron Garnet
- Degradation Phenomenon of p+to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process
- Process Design for Preventing the Gate Oxide Thinning in the Integration of Dual Gate Oxide Transistor
- New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- Influence of Grain boundary Layers on the Dielectric Relaxation of Nb-Doped SrTiO_3
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Scaling of Three-Dimensional Integral Imaging
- Depth-Enhanced Integral Imaging with a Stepped Lens Array or a Composite Lens Array for Three-Dimensional Display
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- The Hydrophilization of Process Wafers in Dilute Hydrogen Peroxide Solutions and Ozonated Deionized Water and Its Effects on Defects and Gate Oxide Integrity
- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Ring Contact Electrode Process for High Density Phase Change Random Access Memory
- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
- Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
- Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device