MASAHARA M. | National Institute of Advanced Industrial Science and Technology (AIST)
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概要
- MASAHARA M.の詳細を見る
- 同名の論文著者
- National Institute of Advanced Industrial Science and Technology (AIST)の論文著者
関連著者
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Matsukawa T.
Nanoelectronics Research Institiute Aist
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MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
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Masahara M.
Nanoelectronics Research Institiute Aist
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Suzuki E.
Nanoelectronics Research Institiute Aist
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Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Endo K.
Nanoelectronics Research Institiute Aist
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Liu Y.-x.
Nanoelectronics Research Institiute Aist
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ENDO K.
Nanoelectronics Research Institiute, AIST
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Yamauchi H.
Nanoelectronics Research Institiute Aist
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Yokoyama H.
Nanoelectronics Research Institute Aist
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MASAHARA M.
Nanoelectronics Research Institiute, AIST
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SUZUKI E.
Nanoelectronics Research Institiute, AIST
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MATSUKAWA T.
National Institute of Advanced Industrial Science and Technology (AIST)
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ENDO K.
National Institute of Advanced Industrial Science and Technology (AIST)
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ISHII K.
National Institute of Advanced Industrial Science and Technology (AIST)
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SUZUKI E.
National Institute of Advanced Industrial Science and Technology (AIST)
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YAMAUCHI H.
Nanoelectronics Research Institiute, AIST
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TSUKADA J.
Nanoelectronics Research Institiute, AIST
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Takashima H.
School Of Science And Technology Meiji University
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Liu Y.
National Laboratory Of Solid State Microstructrues And Department Of Physics Nanjing University
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YAMAUCHI H.
National Institute of Advanced Industrial Science and Technology (AIST)
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LIU Y.
Nanoelectronics Research Institiute, AIST
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ISHII K.
Nanoelectronics Research Institiute, AIST
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SUGIMATA E.
National Institute of Advanced Industrial Science and Technology (AIST)
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TAKASHIMA H.
National Institute of Advanced Industrial Science and Technology (AIST)
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O'uchi S.
National Institute Of Advanced Industrial Science And Technology (aist)
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Tsukada J.
Nanoelectronics Research Institiute Aist
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Ishikawa Y.
National Cardiovascular Center
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Yasumuro C.
Nanoelectronics Research Institute Aist
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Kanemaru S.
Nanoelectronics Research Institute Aist
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HAYASHIDA T.
School of Science and Technology, Meiji University
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SAKAMOTO K.
National Institute of Advanced Industrial Science and Technology (AIST)
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TSUKADA J.
National Institute of Advanced Industrial Science and Technology (AIST)
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OGURA A.
School of Science and Technology, Meiji University
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ISHIKAWA Y.
Nanoelectronics Research Institiute, AIST
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LIU Y.-X.
National Institute of Advanced Industrial Science and Technology (AIST)
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LIU Y.-X.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAKAMOTO K.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SEKIGAWA T.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ITOH J.
Nanoelectronics Research Institute, AIST
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HOSOKAWA S.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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NAITOU Y.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TANOUE H.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Tanoue H.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Sekigawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hosokawa S.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Naitou Y.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
著作論文
- TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Investigation of Accumulation-mode Vertical Double-gate MOSFET
- Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)
- Work function control of Al-Ni alloy for metal gate application
- Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)