Yokoyama H. | Nanoelectronics Research Institute Aist
スポンサーリンク
概要
関連著者
-
Matsukawa T.
Nanoelectronics Research Institiute Aist
-
Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Yamauchi H.
Nanoelectronics Research Institiute Aist
-
Yokoyama H.
Nanoelectronics Research Institute Aist
-
MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
-
Masahara M.
Nanoelectronics Research Institiute Aist
-
Suzuki E.
Nanoelectronics Research Institiute Aist
-
Endo K.
Nanoelectronics Research Institiute Aist
-
Liu Y.-x.
Nanoelectronics Research Institiute Aist
-
ENDO K.
Nanoelectronics Research Institiute, AIST
著作論文
- TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Work function control of Al-Ni alloy for metal gate application
- Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy