MASAHARA M. | Nanoelectronics Research Institiute, AIST
スポンサーリンク
概要
関連著者
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Matsukawa T.
Nanoelectronics Research Institiute Aist
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MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
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ENDO K.
Nanoelectronics Research Institiute, AIST
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MASAHARA M.
Nanoelectronics Research Institiute, AIST
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SUZUKI E.
Nanoelectronics Research Institiute, AIST
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Masahara M.
Nanoelectronics Research Institiute Aist
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Suzuki E.
Nanoelectronics Research Institiute Aist
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Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Endo K.
Nanoelectronics Research Institiute Aist
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YAMAUCHI H.
Nanoelectronics Research Institiute, AIST
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Liu Y.-x.
Nanoelectronics Research Institiute Aist
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Yamauchi H.
Nanoelectronics Research Institiute Aist
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Yokoyama H.
Nanoelectronics Research Institute Aist
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LIU Y.
Nanoelectronics Research Institiute, AIST
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TSUKADA J.
Nanoelectronics Research Institiute, AIST
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ISHII K.
Nanoelectronics Research Institiute, AIST
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Tsukada J.
Nanoelectronics Research Institiute Aist
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Yasumuro C.
Nanoelectronics Research Institute Aist
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Kanemaru S.
Nanoelectronics Research Institute Aist
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ISHIKAWA Y.
Nanoelectronics Research Institiute, AIST
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LIU Y.-X.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAKAMOTO K.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SEKIGAWA T.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ITOH J.
Nanoelectronics Research Institute, AIST
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Sekigawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
著作論文
- Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)
- Work function control of Al-Ni alloy for metal gate application