Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes

スポンサーリンク

概要

論文の詳細を見る
2006-09-13

著者

関連論文

TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates
Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
Investigation of Accumulation-mode Vertical Double-gate MOSFET
Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)
Work function control of Al-Ni alloy for metal gate application
Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy
43.1: Invited Paper : Active-Matrix Field-Emitter Arrays for the Next-Generation FEDs(2.主なFED関連発表内容)(Report on 1999 SID International Symposium)
Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)

スポンサーリンク