Investigation of Accumulation-mode Vertical Double-gate MOSFET
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Matsukawa T.
Nanoelectronics Research Institiute Aist
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MATSUKAWA T.
National Institute of Advanced Industrial Science and Technology (AIST)
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ENDO K.
National Institute of Advanced Industrial Science and Technology (AIST)
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MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
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ISHII K.
National Institute of Advanced Industrial Science and Technology (AIST)
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SUZUKI E.
National Institute of Advanced Industrial Science and Technology (AIST)
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SUGIMATA E.
National Institute of Advanced Industrial Science and Technology (AIST)
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TAKASHIMA H.
National Institute of Advanced Industrial Science and Technology (AIST)
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LIU Y.-X.
National Institute of Advanced Industrial Science and Technology (AIST)
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Liu Y.-x.
Nanoelectronics Research Institiute Aist
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Masahara M.
Nanoelectronics Research Institiute Aist
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Suzuki E.
Nanoelectronics Research Institiute Aist
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Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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O'uchi S.
National Institute Of Advanced Industrial Science And Technology (aist)
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Takashima H.
School Of Science And Technology Meiji University
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Endo K.
Nanoelectronics Research Institiute Aist
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