Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Matsukawa T.
Nanoelectronics Research Institiute Aist
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MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
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ENDO K.
Nanoelectronics Research Institiute, AIST
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Masahara M.
Nanoelectronics Research Institiute Aist
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Suzuki E.
Nanoelectronics Research Institiute Aist
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HOSOKAWA S.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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NAITOU Y.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TANOUE H.
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Tanoue H.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hosokawa S.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Endo K.
Nanoelectronics Research Institiute Aist
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Naitou Y.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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- Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)