MATSUKAWA T. | National Institute of Advanced Industrial Science and Technology (AIST)
スポンサーリンク
概要
関連著者
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Matsukawa T.
Nanoelectronics Research Institiute Aist
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MATSUKAWA T.
National Institute of Advanced Industrial Science and Technology (AIST)
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ENDO K.
National Institute of Advanced Industrial Science and Technology (AIST)
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MASAHARA M.
National Institute of Advanced Industrial Science and Technology (AIST)
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ISHII K.
National Institute of Advanced Industrial Science and Technology (AIST)
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SUZUKI E.
National Institute of Advanced Industrial Science and Technology (AIST)
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Liu Y.-x.
Nanoelectronics Research Institiute Aist
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Masahara M.
Nanoelectronics Research Institiute Aist
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Suzuki E.
Nanoelectronics Research Institiute Aist
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Matsukawa T.
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Takashima H.
School Of Science And Technology Meiji University
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Endo K.
Nanoelectronics Research Institiute Aist
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Liu Y.
National Laboratory Of Solid State Microstructrues And Department Of Physics Nanjing University
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YAMAUCHI H.
National Institute of Advanced Industrial Science and Technology (AIST)
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SUGIMATA E.
National Institute of Advanced Industrial Science and Technology (AIST)
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TAKASHIMA H.
National Institute of Advanced Industrial Science and Technology (AIST)
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O'uchi S.
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamauchi H.
Nanoelectronics Research Institiute Aist
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Yokoyama H.
Nanoelectronics Research Institute Aist
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Ishikawa Y.
National Cardiovascular Center
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HAYASHIDA T.
School of Science and Technology, Meiji University
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SAKAMOTO K.
National Institute of Advanced Industrial Science and Technology (AIST)
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TSUKADA J.
National Institute of Advanced Industrial Science and Technology (AIST)
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OGURA A.
School of Science and Technology, Meiji University
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TSUKADA J.
Nanoelectronics Research Institiute, AIST
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LIU Y.-X.
National Institute of Advanced Industrial Science and Technology (AIST)
著作論文
- TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature
- Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Investigation of Accumulation-mode Vertical Double-gate MOSFET