NAKAJIMA Ken | ULSI Device Development Labs, NEC Corporation

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著作論文

Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography
Recent Progress in Electron-Beam Cell Projection Techology
0.15μm CMOS Devices with Reduced Junction Capacitance
0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
Resist Heating in Cell Projection Electron Beam Direct Writing
Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System
Improved Registration Accuracy in E-Beam Direct Writing Lithography
0.15 µm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication

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