Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1',2'-d]thiophene (Special Issue : Printed Electronics)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Okamoto Toshihiro
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Nakahara Katsumasa
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Soeda Junshi
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Miwa Kazumoto
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Sato Hiroyasu
Rigaku Corporation, Akishima, Tokyo 196-8666, Japan
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Yamano Akihito
Rigaku Corporation, Akishima, Tokyo 196-8666, Japan
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Yamagishi Masakazu
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Takeya Jun
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Uemura Takafumi
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Mitsui Chikahiko
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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OKAMOTO Toshihiro
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University
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YAMAGISHI Masakazu
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University
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