Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1',2'-d]thiophene
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概要
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We describe physicochemical properties, crystal structures, and field-effect transistor performances of dinaphtho[2,1-b:1',2'-d]thiophene (DNT-U) with a unique twisted structure. The HOMO energy level of DNT-U was estimated to be -5.77 eV by measurement of electrochemical property in solution, indicating that this material is a promising candidate for air-stable p-type organic semiconductors. DNT-U possesses anisotropic one-dimensional transfer integrals originating from the columnar face-to-face \pi-stacking motif, which was determined by X-ray single crystal structural analysis. In order to evaluate intrinsic hole transporting ability of DNT-U, we fabricated the single-crystal field-effect transistors (FETs). The devices showed hole mobility of up to 0.15 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, which value is almost one order of magnitude higher than that of the vacuum deposited thin film FETs.
- 2013-05-25
著者
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Yamagishi Masakazu
Department of Cardiology, National Cardiovascular Center
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Mitsui Chikahiko
Department Of Chemistry School Of Science The University Of Tokyo
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UEMURA Takafumi
Department of Chemistry, Graduate School of Science, Osaka University
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TAKEYA Jun
Department of Chemistry, Graduate School of Science, Osaka University
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Okamoto Toshihiro
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Nakahara Katsumasa
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Soeda Junshi
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Miwa Kazumoto
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Sato Hiroyasu
Rigaku Corporation, Akishima, Tokyo 196-8666, Japan
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Yamano Akihito
Rigaku Corporation, Akishima, Tokyo 196-8666, Japan
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Yamagishi Masakazu
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Takeya Jun
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Uemura Takafumi
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Mitsui Chikahiko
Department of Advanced Electron Devices, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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