Depth-Profiling Study on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
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概要
- 論文の詳細を見る
- 2013-03-00
著者
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Iwamatsu Shinnosuke
Yamagata Research Institute Of Technology
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WATANABE Yoshiyuki
Yamagata Research Institute of Technology
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KOBAYASHI Seiya
Yamagata Research Institute of Technology
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Yahagi Toru
Yamagata Research Institute of Technology, Yamagata 990-2473, Japan
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Takechi Kazushige
NLT Technologies, Ltd., Kawasaki 211-8666, Japan
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Tanabe Hiroshi
NLT Technologies, Ltd., Kawasaki 211-8666, Japan
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- Depth-Profiling Study on Amorphous Indium--Gallium--Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy
- Depth-Profiling Study on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
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