Depth-Profiling Study on Amorphous Indium--Gallium--Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy

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概要

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• We performed an X-ray photoelectron spectroscopy (XPS) depth-profiling study on the materials used in amorphous indium--gallium--zinc oxide thin-film transistors (a-IGZO TFTs) with Ti and Mo source/drain (S/D) electrodes. The XPS results suggested that there are some differences between the interface regions of Ti/a-IGZO and Mo/a-IGZO for different chemical states of the materials. The chemical states of the back-channel surfaces were also found to be different between the TFTs with Ti and Mo S/D electrodes. In addition, we fabricated indium--gallium--zinc--titanium oxide composite thin films by deposition using multitarget co-sputtering. The electronic structure of these films observed by XPS is similar to that of the Ti/a-IGZO interface region. The fabricated films were found to have a very low resistivity, much lower than that of an a-IGZO film using typical TFT fabrication processes.

• 2013-03-25

著者

• Iwamatsu Shinnosuke

  Yamagata Research Institute Of Technology

• WATANABE Yoshiyuki

  Yamagata Research Institute of Technology

• KOBAYASHI Seiya

  Yamagata Research Institute of Technology

• Yahagi Toru

  Yamagata Research Institute of Technology, Yamagata 990-2473, Japan

• Takechi Kazushige

  NLT Technologies, Ltd., Kawasaki 211-8666, Japan

• Tanabe Hiroshi

  NLT Technologies, Ltd., Kawasaki 211-8666, Japan

• Kobayashi Seiya

  Yamagata Research Institute of Technology, Yamagata 990-2473, Japan

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