Bottom-gate amorphous InGaZnO

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-06-24

著者

• Takechi Kazushige

  NLT Technologies, Ltd., Kawasaki 211-8666, Japan

関連論文

• Characterization of Top-Gate Effects in Amorphous InGaZnO Thin-Film Transistors Using a Dual-Gate Structure
• Depth-Profiling Study on Amorphous Indium--Gallium--Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy
• Depth-Profiling Study on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Bottom-gate amorphous InGaZnO

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