Suppression of Stress-Induced Voiding by Controlling Microstructure of Cu Electroplated Films

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概要

• 論文の詳細を見る

• In advanced LSI devices, the filling capability for the electroplating (ECP) process, impurities in Cu film, and grain growth after ECP are important properties of Cu interconnect reliability. It has been reported that the Cu grain growth depends on the ECP-Cu film characteristics and the annealing conditions. In this study, we focus on the deposition thickness of ECP-Cu films to control their microstructure. It is revealed that a thicker ECP-Cu film enlarges the Cu grain size and reduces the number of small grains. It is also revealed that Cu grains in a wide line with a thicker ECP-Cu film are larger, leading to reliability improvement. A film with larger grains has fewer grain boundaries and fewer diffusion paths of vacancies, and a film with fewer small grains has a decreased number of vacancies. As a result, stress-induced voiding phenomena are apparently suppressed by increasing the thickness of deposited ECP-Cu film.

• 2013-05-25

著者

• Fujisawa Masahiko

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Maekawa Kazuyoshi

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Kudo Shuichi

  Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

• Mori Kenichi

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Suzumura Naohito

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Muranaka Seiji

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Shibata Ryuji

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Omori Kazuyuki

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

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• Suppression of Stress-Induced Voiding by Controlling Microstructure of Cu Electroplated Films

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