Effective Species in Inductively Coupled Nitrogen Plasma for Silicon Nitriding
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概要
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We examined effective species in an inductively coupled nitrogen plasma for the nitriding of a silicon surface. We compared the fluxes of active species [N(4), N(2), N<sub>2</sub>($A^{3}\Sigma_{\text{u}}^{+}$), and N<sub>2</sub>+] with the thickness of the SiO<sub>x</sub>N<sub>y</sub> layer formed on a silicon substrate. As a result, we concluded that the effective species in silicon nitriding are N<sub>2</sub>($A^{3}\Sigma_{\text{u}}^{+}$) and N<sub>2</sub>+, when the kinetic energy of N<sub>2</sub>+ is less than 10 eV.
- 2011-08-25
著者
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Kurihara Kazuaki
Research And Development Center Toshiba Corporation
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Horikawa Yoshimine
Division Of Quantum Science And Engineering Graduate School Of Engineering Hokkaido University
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Sasaki Koichi
Division Of Quantum Science And Engineering Faculty Of Engineering Hokkaido University
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Kurihara Kazuaki
Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Horikawa Yoshimine
Division of Quantum Science and Engineering, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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