Large-Area Growth of In-Plane Oriented ($11\bar{2}0$) ZnO Films by Linear Cathode Magnetron Sputtering
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概要
- 論文の詳細を見る
($11\bar{2}0$) textured ZnO films are good candidates for shear-mode piezoelectric devices. In the previous deposition techniques of these films, there have been two problems related to their practical application. These problems are as follows: (i) highly oriented films can be obtained only in a small area and (ii) the crystallite $c$-axis of in the films is radially oriented in the substrate plane. To resolve these problems, the sputtering deposition technique using a linear cathode has been proposed. The in-plane and out-of-plane orientations of the films were quantitatively determined by pole figure analysis. As a result, we have demonstrated the formation of in-plane unidirectionally oriented ($11\bar{2}0$) ZnO films over the entire area of 4-in. silicon wafers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-07-25
著者
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OBA Masatoshi
OMRON Corporation
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YANAGITANI Takahiko
Nagoya Institute of Technology
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Matsukawa Mami
Faculty Of Engineering Doshisha University
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Watanabe Yoshiaki
Faculty Of Engineering Doshisha University
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Sasaki Sho
Omron Corp.
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Mori Yoshikazu
OMRON Corporation, Kizugawa, Kyoto 619-0283, Japan
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Kawamoto Takayuki
OMRON Corporation, Kizugawa, Kyoto 619-0283, Japan
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Yanagitani Takahiko
Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Sasaki Sho
OMRON Corporation, Kizugawa, Kyoto 619-0283, Japan
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Oba Masatoshi
OMRON Corporation, Kizugawa, Kyoto 619-0283, Japan
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