Effects of Sputtering Gas Conditions on Formation of ($11\bar{2}0$) Textured ZnO Films

概要

論文の詳細を見る
The ZnO films in which the crystallite $c$-axis is unidirectionally aligned in the substrate plane [($11\bar{2}0$) textured ZnO films] enable the realization of shear mode devices in the ultra high frequency (UHF) range. In this study, we have investigated the ($11\bar{2}0$) textured ZnO film, focusing on the effect of total gas pressure and partial gas pressure of oxygen and argon during sputtering deposition. The crystallographic characteristics of the films were measured by X-ray diffraction (XRD) analysis. In addition, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized ($11\bar{2}0$) textured ZnO films were obtained under the conditions of low total gas pressure and high oxygen gas concentration. Under these conditions, strong optical emission spectra from oxygen species were observed. From these results, we conclude that energetic oxygen particle bombardment to the substrate contributes to the ($11\bar{2}0$) texture formation. The film with an $\omega$-scan rocking curve FWHM of 3.3° showed a $k_{15}$ value of 0.16, which was 62% of the value for a single crystal.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-07-30