Synthesis of Nondoped Potassium Niobate Ceramics by Ultrasonic Assisted Hydrothermal Method
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概要
- 論文の詳細を見る
Non doped potassium niobate (KNbO3) crystal powders were synthesized by ultrasonic-assisted hydrothermal method for use in lead-free piezoelectric ceramics. By using the ultrasonic assist technique, the yield constant of the KNbO3 crystal powders became 96% with 3 h of reaction time. It was 4 times faster than that of the previous non ultrasonic assist hydrothermal method for the KNbO3 crystal powders. This result indicated that the high-intensity ultrasound radiation was effective for overcoming the serious problem of slow hydrothermal reaction. The reaction temperature was 190 °C, which was 20 °C lower than that of previous hydrothermal method. After sintering of hydrothermal KNbO3 powders at 1030 °C for 1 h, the obtained ceramics pellet was characterized by admittance measurement, and the piezoelectric performance was examined. From the admittance measurements corresponding to the radial and thickness vibration modes, the coupling factors $k_{\text{r}}$ and $k_{\text{t}}$ and the piezoelectric constants $d_{31}$ and $d_{33}$ were determined to be 0.17 and 0.28, and $-31$ and 51 pm/V, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Hosaka Hiroshi
Department Of Environmental Studies Graduate School Of Frontier Sciences The University Of Tokyo
-
Kadota Yoichi
Department Of 3rd Internal Medicine Kansai Medical School
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Ishikawa Mutsuo
Department Of Laboratory Medicine Shinshu University Hospital
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Morita Takeshi
Department Of Anesthesiology School Of Dental Medicine Tsurumi University
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Hosaka Hiroshi
Department of Human and Engineered Environmental studies, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8563, Japan
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Takiguchi Norihito
Department of Human and Engineered Environmental studies, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8563, Japan
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Ishikawa Mutsuo
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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