Local Oxidation of Si Surfaces by Tapping-Mode Scanning Probe Microscopy: Size Dependence of Oxide Wires on Dynamic Properties of Cantilever
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概要
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Local-oxidation nanolithography by scanning probe microscopy (SPM) has enabled us to fabricate nanometer-scale oxide wires on Si surfaces. Here, we investigate the size dependence of the wires on the dynamic properties (oscillation amplitude, Q-factor) of the cantilever used in tapping-mode SPM local oxidation. With the enhancement of oscillation amplitude from 72 to 432 nm at a natural Q-factor of 505, the width and height of the Si oxide wires were controlled and ranged from 31.3 to 18.3 nm in width and from 1.5 to 0.4 nm in height, respectively. On the other hand, when the amplitude was fixed at a natural value of 144 nm, local oxidation with a low Q-factor of 193 realized an oxide wire with a width of 33.7 nm and a height of 1.2 nm. At a high Q-factor of 1665, the width and height of the fabricated Si oxide wire were 24.9 and 1.0 nm, respectively. These results imply that the size of the oxide wire is more strongly affected by the oscillation amplitude of the cantilever than the Q-factor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Nishimura Shinya
Department Of Anesthesiology Osaka General Medical Center
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Takemura Yasushi
Division Of Electrical And Computer Engineering Faculty Of Engineering Yokohama National University
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Shirakashi Jun-ichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Takemura Yasushi
Division of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, Japan
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Ogino Takumi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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