Control of Tunnel Resistance of Nanogaps by Field-Emission-Induced Electromigration
スポンサーリンク
概要
- 論文の詳細を見る
A simple method for controlling the tunnel resistance of nanogap electrodes, based on electromigration induced by field emission current, is presented. In this study, we investigated the controllability of the tunnel resistance of nanogap electrodes by only adjusting the applied current. Initial planar nanogaps of Ni, typically separated by 22–44 nm, were fabricated on SiO2/Si substrates by electron-beam lithography and lift-off process. Then, a current was passed through the nanogaps at room temperature. By increasing the current from about 1 nA to 30 μA, the resistance of the nanogaps decreased, ranging from 100 T$\Omega$ to 10 M$\Omega$. This result implies that this technique can simplify the fabrication of planar-type tunnel junction devices.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
-
Shirakashi Jun-ichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
-
Takahashi Keisuke
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
-
Kayashima Sho
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
-
Motoyama Motoaki
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
関連論文
- Magnetization Switching of Magnetic Submicron Structure Fabricated by Atomic Force Microscope
- AFM Nano-oxidation of NiFe Thin Films Capped with Al-Oxide Layers for Planar-type Tunnel Junction
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Serum interleukin-6 response after spinal surgery : estimation of surgical magnitude
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Electric Conductivity and Proton Motion below Superionic Transition on Rb_3H(SeO_4)_2
- Proton Motion in Paraelastic Phase for Rb_3H (SeO_4)_2
- Lumbar Paraspinal Myonecrosis After Abdominal Vascular Surgery : A Case Report
- 2005-Research development of giant magnetostrictive Sm-Fe alloy films
- Influences of Process Condition of Magnetron Sputtering on Magnetostrictive Susceptibility of Fe_Sm Alloy Film
- Scratch Nanolithography on Si Surface Using Scanning Probe Microscopy: Influence of Scanning Parameters on Groove Size
- Percutaneous vertebroplasty for vertebral pseudoarthrosis with delayed palsy
- Measurement of Reaction Current during Atomic Force Microscope Local Oxidation of Conductive Surfaces Capped with Insulating Layers
- Sub-20 nm Scratch Nanolithography for Si Using Scanning Probe Microscopy
- Micrometer-Scale Local-Oxidation Lithography Using Scanning Probe Microscopy
- Local Oxidation of Si Surfaces by Tapping-Mode Scanning Probe Microscopy: Size Dependence of Oxide Wires on Dynamic Properties of Cantilever
- Control of Tunnel Resistance of Nanogaps by Field-Emission-Induced Electromigration